发明名称 |
NOVEL METHOD TO ADJUST WORK FUNCTION BY PLASMA ASSISTED METAL INCORPORATED DIELECTRIC |
摘要 |
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric on a substrate; introducing metal dopants into the gate dielectric; annealing the gate dielectric; and forming a gate electrode on the gate dielectric.
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申请公布号 |
US2008146012(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20070695227 |
申请日期 |
2007.04.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WENLI;HOU YONG-TIAN;LIN KANG-CHENG;HUANG KUO-TAI;LEE TZE-LIANG;LIANG MONG-SONG |
分类号 |
H01L21/3205;H01L21/31 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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