| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which does not intensify a short channel effect and suppresses an increase in contact resistance between a substrate and a contact. SOLUTION: The semiconductor device includes a semiconductor substrate 11 having a trench 15, a first conductive well layer formed in the semiconductor substrate 11, a block layer 17 which is formed in the trench 15 and is made of an insulating layer, a gate electrode G which is formed on the semiconductor substrate 11 in separation from the block layer 17, a second conductive first diffusion layer 24 which is formed on the surface of the semiconductor substrate 11 and has an impurity concentration peak at a first depth from the surface of the semiconductor substrate 11, a second conductive second diffusion layer 27 which is formed on the surface of the semiconductor substrate 11 that is opposite to the gate electrode G with respect to the block layer 17, has an impurity concentration peak at a second depth greater than the first depth from the surface of the semiconductor substrate 11, and is in contact with the first diffusion layer to be electrically connected thereto, and a contact 35 connected to the second diffusion layer 27. COPYRIGHT: (C)2008,JPO&INPIT
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