SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which a slit is prevented from being formed on a stressor film. SOLUTION: An N-type MIS transistor is provided with a gate insulating film 102; a gate electrode 103; a first sidewall spacer 112; source and drain regions 107; a silicide layer 108; a second sidewall spacer 113 formed on the first silicide layer 108 and near a corner portion where the side surface of the first sidewall spacer 112 crosses the upper surface of the first silicide layer 108; and a stressor film 109 for applying a tension stress in a gate length direction of a channel region. COPYRIGHT: (C)2008,JPO&INPIT