| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the source-drain spacing can be downsized while assuring the source-drain breakdown voltage. SOLUTION: The semiconductor device includes a semiconductor substrate consisting of an N-type epitaxial silicon layer 5 formed on a P-type silicon substrate 1 and an N-type buried diffusion layer 3 on the interface of them, a trench 17 reaching the N-type buried diffusion layer 3 from the major surface S of the N-type epitaxial silicon layer 5, a silicon oxide film 18 covering the side face in the trench 17, a lead-out layer 19 filling the trench 17 through the silicon oxide film 18 and being connected with the N-type buried diffusion layer 3, a trench 9 provided in the major surface S, a gate electrode 11 provided in the trench 9 through a silicon oxide film 10a, an N-type source diffusion layer 13 provided on the opposite side faces of the trench 9, a trench 17a provided in the major surface S between the trench 17 and the N-type source diffusion layer 13, and a silicon oxide film 18a filling the trench 17a. COPYRIGHT: (C)2008,JPO&INPIT
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