| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having an improved sense amplifier for FBC. SOLUTION: The semiconductor storage device includes first and second memory cells for storing data of reverse polarity each other according to the number of many carriers in a body area. In a first isolation transistor 1, a first node SN1 to be connected to the first memory cell is made to be one end and another end is set to a second node SN0. As to a second isolation transistor 2, a third node /SN1 to be connected to the second memory cell is made to be one end and another end is set to a fourth node /SN0. First conductivity-type first and second amplification transistors 13, 14 are connected in series between the first and third nodes, and their gate electrodes are respectively connected with the third and first nodes. Second conductivity-type third and fourth amplification transistors 22, 23 are connected in series between the second and fourth nodes, and their gate electrodes are respectively connected with the fourth and second nodes. Equalizing transistor 15 is connected between the first and third nodes. COPYRIGHT: (C)2008,JPO&INPIT
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