| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film of high temperature superconducting oxide (RE)Ba<SB>2</SB>Cu<SB>3</SB>O<SB>7</SB>(RE=Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb) (hereinafter, referred to (RE)BCO thin film) having a high critical current density and causing no cracking, and to provide its fabrication process. SOLUTION: On the buffer layer of a sapphire single crystal substrate having a buffer layer, a thin film of high temperature superconducting oxide (RE)BCO into which 1% or more of cavities are introduced is provided through an intermediate thin film of (RE')Ba<SB>2</SB>Cu<SB>3</SB>O<SB>7</SB>where RE' different from RE of the (RE)BCO thin film is selected. COPYRIGHT: (C)2008,JPO&INPIT |
