发明名称 MASK DATA GENERATION METHOD, MASK FORMATION METHOD, PATTERN FORMATION METHOD
摘要 There is provided an OPC method for obtaining a desired shape in the area where accuracy is required in the case where the area where OPC accuracy is required and the area where no/little OPC accuracy is required are adjacent. At the boundary part between the area where OPC accuracy is required and the area where no little OPC accuracy is required, the area where accuracy is required is enlarged by an area suitable for the area with high accuracy, and the area where no/little accuracy is required is contracted by the area suitable for the area with high accuracy thereafter to perform OPC calculations corresponding to accuracies with respect to respective areas to thereby obtain a desired pattern.
申请公布号 US2008148218(A1) 申请公布日期 2008.06.19
申请号 US20070959610 申请日期 2007.12.19
申请人 NEC ELECTRONICS CORPORATION 发明人 KAWAKAMI YUKIYA;YAMAMOTO ATSUSHI;TONOOKA YOUJI
分类号 G06F17/50;G03F1/36;G03F1/68;G03F1/70 主分类号 G06F17/50
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