| 摘要 |
A pn junction structure and a panel junction forming method are provided to improve a manufacturing speed of a semiconductor device by performing a dopant injection process and a thermal treatment process at the same time. A pn junction structure includes a wafer(100), a first semiconductor region, a second semiconductor region, and electrodes. A first ion particle is injected and diffused into the wafer to form the first semiconductor region of a first conductivity type. The second semiconductor region is separated from the first semiconductor region. A second ion particle is injected and diffused into the wafer to form the second semiconductor region of a second conductivity type. The electrodes are formed to couple the first and second semiconductor regions with each other. After the first ion particle is injected, the second ion particle is injected, and the first and second ion particles are diffused at the same time.
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