| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent cracks on the end face of a semiconductor device that may occur when removing a substrate in a laser lift-off process. <P>SOLUTION: In a method of manufacturing the semiconductor device, a light-emitting element 12, which forms a p electrode 13 and a low-melt-point metal diffusion prevention layer 14 on the upper surface and comprises a plurality of group III nitride semiconductors, is formed on a sapphire substrate 10. A resist film 15 is formed on the sapphire substrate 10 on which no light-emitting elements 12 are formed, and an end face protective film 16 made of SiO<SB>2</SB>is formed on the end face and upper surface of the light-emitting element 12 (Fig.1D). A low-melt-point metal layer 18 is formed on the upper surface of the low-melt-point metal diffusion prevention layer 14 and the end face protective film 16 for joining to a support substrate 19 via the low-melt-point metal layer 18. After that, the sapphire substrate 10 is separated for removal by laser lift-off to remove the resist film 15. <P>COPYRIGHT: (C)2008,JPO&INPIT |
