| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which manufactures the semiconductor device, high in characteristics, with an excellent yield. <P>SOLUTION: The manufacturing method of the semiconductor device comprises a process for preparing a GaN substrate 10, in which the density of polarity inversion regions 10t having an area wherein the polarity in the [0001] direction is inverted with respect to the main region 10s of the GaN substrate 10 is not less than 1 μm<SP>2</SP>is D cm<SP>-2</SP>in the main surface 10m of the GaN substrate 10, that is, (0001) surface while the ratio S<SB>t</SB>/S of the total area S<SB>t</SB>cm<SP>2</SP>of the polarity inversion regions 10t to the total area S cm<SP>2</SP>of the main surface 10m of the GaN substrate 10 is not more than 0.5 and a process for forming a semiconductor device 40, in which the product S<SB>c</SB>×D of the area S<SB>c</SB>of the main surface 40m of the semiconductor device 40 by the density D of the polarity inversion regions 10t becomes not more than 2.3, by growing at least one layer of semiconductor layer 20 on the main surface 10m of the GaN substrate 10. <P>COPYRIGHT: (C)2008,JPO&INPIT |
