发明名称 SIMULATION METHOD, SIMULATION SYSTEM, AND METHOD OF CORRECTING MASK PATTERN
摘要 A simulation system has an entry acceptance unit, a calculation unit, and a decision unit. The entry acceptance unit accepts an entry of measured dimension of the transfer pattern, the calculation unit includes an electric field vector calculation unit, a flare electric field vector calculation unit and a light intensity calculation unit. The electric field vector calculation unit calculates triaxial vector components of electric field at every position, the flare electric field vector calculation unit calculates a flare electric field vector based on polarization ratio of an exposure tool, and based on tentative horizontal ratio and tentative vertical ratio on the wafer surface for every position, the light intensity calculation unit calculates light intensity by adding the electric field vector and the flare electric field vector so as to calculate sum of squares of the triaxial components.
申请公布号 US2008145769(A1) 申请公布日期 2008.06.19
申请号 US20070956439 申请日期 2007.12.14
申请人 NEC ELECTRONICS CORPORATION 发明人 KAWAKAMI YUKIYA
分类号 G03C5/00;G03F1/30;G03F1/36;G03F1/68;G03F7/20;G06F17/50;H01L21/027 主分类号 G03C5/00
代理机构 代理人
主权项
地址