METHOD FOR FABRICATING ULTRA-HIGH TENSILE-STRESSED FILM AND STRAINED-SILICON TRANSISTORS THEREOF

摘要

A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cm³ covering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.