发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE |
摘要 |
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.
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申请公布号 |
US2008142923(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20060611515 |
申请日期 |
2006.12.15 |
申请人 |
HVVI SEMICONDUCTORS, INC. |
发明人 |
TISCHLER MICHAEL ALBERT |
分类号 |
H01L29/00;H01L21/20;H01L21/4763;H01L21/76 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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