| 摘要 |
A method for Si crystallization using an alternating magnetic field is provided to improve crystallization in a channel region by forming a magnetic substance pattern on the channel region or on a portion adjacent to the channel region. A substrate(200) is prepared. An amorphous silicon layer(202) is formed on the substrate. Magnetic substance patterns(204a,204b) are formed on a surface of the amorphous silicon layer. Heat is applied to the substrate on which the magnetic substance patterns are formed and a magnetic field(206) is applied at the same time. Crystallization is promoted on a region at which the magnetic substance exists and a region adjacent thereto through the focusing of an alternating magnetic field by the magnetic substance. The magnetic substance is a ferromagnetic substance or a ferrimagnetic substance. The ferromagnetic substance is nickel(Ni), cobalt(Co). ferrum(Fe), and an alloy thereof. The ferrimagnetic substance is a ferrite material including MOFe2O3.
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