SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a high voltage applying terminal without increasing the number of manufacturing processes and manufacturing cost in a semiconductor integrated circuit. SOLUTION: A transfer gate 54 comprising a high voltage-resistant NMOS (T4) and a pull-up resistor 55 are provided. An input terminal of the transfer gate 54 is connected to a high voltage applying terminal 50 and an output terminal of the transfer gate 54 is connected to a CMOS inverter 52 via an input resistor 51. One of the ends of the pull-up resistor 55 is connected to the output terminal of the transfer 54 and to the other end of the pull-up resistor 55, a source voltage VDD (5V) is applied. The transfer gate 54 lowers inputted high voltage VX (VX>VDD) down to VDD-Vt1'. The pull-up resistor 55 biases voltage of the output terminal of the transfer gate 54 to the VDD and raises the voltage of the output terminal lowered by the transfer gate 54 almost to the VDD. COPYRIGHT: (C)2008,JPO&INPIT