发明名称 Nitride light emitting device and manufacturing method thereof
摘要 A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
申请公布号 US2008145962(A1) 申请公布日期 2008.06.19
申请号 US20080071036 申请日期 2008.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD.;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SONG JUNE-O;SEONG TAE-YEON;LEEM DONG-SEOK
分类号 H01L29/10;H01L33/06;H01L33/32;H01L33/42;H01S5/00 主分类号 H01L29/10
代理机构 代理人
主权项
地址