GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE WITH REDUCED STRESS ELECTRON BLOCKING LAYER

摘要

A semiconductor device comprises an active layer (350) and a cladding layer (370). An electron blocking layer (380) is at least partially disposed in a region between the active layer and the cladding layer and is configured to form a potential barrier to a flow of electrons from the active layer toward the cladding layer. The electron blocking layer comprises two elements from Group m of the periodic table and an element from Group V of the periodic table. One of the two elements from Group III of the periodic table has a concentration profile with a first portion that gradually increases in concentration in a direction away from the active layer toward the cladding layer and a second portion that gradually decreases in concentration between the first portion and the cladding layer.