| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor device using an immersion lithography process. <P>SOLUTION: The method for forming the fine pattern of the semiconductor device includes pretreating a top portion of a photoresist film with an alkane or alcohol solvent in the immersion lithography process and forming an over-coating film, whereby a uniform over-coating film can be formed with a small amount of the solvent. <P>COPYRIGHT: (C)2008,JPO&INPIT |
