| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low-threshold current and a low-operation current by sufficiently increasing the reflectivity of an end mirror, even if employing an epitaxial growing substrate composed of silicon to a semiconductor laser structure composed of a nitride semiconductor. SOLUTION: The nitride semiconductor laser device has: a substrate 101 composed of silicon whose principal plane orientation is a (100) plane; and a semiconductor laminate 120 formed on the substrate 101 and constituted of a plurality of semiconductor layers each composed of a nitride of groups III-V, which include a multiple quantum well active layer 107. The semiconductor laminate 120 has cleavage planes 113 parallel to a plane (011) that is the plane orientation of silicon, and the cleavage planes 113 constitute the end surface mirror. COPYRIGHT: (C)2008,JPO&INPIT
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