NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a three-dimensional nonvolatile semiconductor memory device that achieves both advantages of higher memory density and improved performance. SOLUTION: The nonvolatile semiconductor memory includes: a first nonvolatile memory cell formed above a substrate through a first insulating film; and a second nonvolatile memory cell formed above the first nonvolatile memory cell through a second insulating film. The first nonvolatile memory cell includes: a first semiconductor layer containing an n-type region and a p-type region; and a first gate stack which is formed above the first semiconductor layer and contains a first charge accumulating layer and a first control gate electrode. The second nonvolatile memory cell includes: a second semiconductor layer containing an n-type region and a p-type region; and a second gate stack which is formed above the second semiconductor layer and contains a second charge accumulating layer and a second control gate electrode in positional adjustment to the first gate stack. The first control gate electrode functions as a back gate electrode to the second nonvolatile memory cell. COPYRIGHT: (C)2008,JPO&INPIT