发明名称 Semiconductor storage device
摘要 A potential level of a word line when it is inactive is made different between during a self-refresh operation and during other than the self-refresh operation. The potential level is set to a ground potential GND during the self-refresh operation and set to a negative potential during other than the self-refresh operation.
申请公布号 US2008144416(A1) 申请公布日期 2008.06.19
申请号 US20070984052 申请日期 2007.11.13
申请人 ELPIDA MEMORY, INC. 发明人 MATSUBARA YASUSHI
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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