| 摘要 |
<p>When a plane having surface a level difference is subjected to CMP, the time of polishing on and after a flattening step is designated. Polishing is monitored in situ so that the time point of flattening of a wafer surface level difference by polishing is detected to realize a highly accurate film thickness after polishing. Further, whether the level of polishing is excessive or deficient is determined based on the film thickness after polishing for each work starting, and the polishing time after flattening is regulated to render the film thickness after polishing highly accurate in continuous work starting. For scattering in-situ sampling data, data are produced between sampling data for smoothing to stably determine a change in local data. Further, the relationship between the feature value of the in-situ sampling waveform and the film thickness before polishing, polishing level, and polishing rate is modeled to calculate the polishing time after flattening for each level difference pattern on the product wafer surface.</p> |
