| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film, capable of suppressing the generation of particles and raising productivity, and to provide a forming device, and processing method and program for the forming device. SOLUTION: A control part 100 supplies gas for film deposition to a reaction tube 2 with a semiconductor wafer W stored therein, thereby forming the silicon nitride film on the semiconductor wafer W. The formation of the silicon nitride film is repeated a plurality of times. Before an attachment material attached onto the inner wall, etc., of the reaction tube 2 comes to have a prescribed cumulative film thickness, the control part 100 supplies the oxidation gas to the reaction tube 2, so as to oxidize the attachment material. Continuously, the control part 100 supplies nitride gas to the reaction tube 2, so as to nitride the oxidized attachment material. COPYRIGHT: (C)2008,JPO&INPIT |
