发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To make it hard for resist residues to occur when a plating resist film for forming a cylindrical electrode is exfoliated in a method for manufacturing a semiconductor device called CSP equipped with a columnar electrode. <P>SOLUTION: On the top surface of a protective film 5 including a wire 8, an overcoat film 9 made of polyimide based resin and having an opening 10 at a portion corresponding to a connection pad portion of the wire 8 is formed. Next, a plating resist film 25 having a backing metal layer 11 and an opening 26 is formed. Next, by electrolytically plating copper using the backing metal layer 11 as a plating current path, a columnar electrode composed of a lower columnar electrode 12a and an upper columnar electrode portion 12b is formed on the connection pad portion of the wire 8 in the opening 10 of the overcoat film 9. In this case, there is no room between the wires 8 for the plating resist film 25 to invade, and therefore, it is possible to make it hard for resist residues to occur when the plating resist film 25 is exfoliated. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008141170(A) 申请公布日期 2008.06.19
申请号 JP20070261479 申请日期 2007.10.05
申请人 CASIO COMPUT CO LTD 发明人 KANEKO NORIHIKO
分类号 H01L23/12;H01L21/3205;H01L21/60;H01L23/52 主分类号 H01L23/12
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