| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor photodetector coating in which balance of miniaturization/thinning and optical performance/adhesion is sufficient, which is superior in optical performance, securely has heat resistance of 350°C or above and has short coating time. <P>SOLUTION: The semiconductor photodetector coating is formed on a surface of a semiconductor photodetector. A SiO<SB>2</SB>layer as a low refractive index layer or a TiO<SB>2</SB>layer as a high refractive index layer is set to be a first layer, and both layers are alternately laminated so that 47 layers or 49 layers can be obtained in total. The semiconductor photodetector coating has thickness of 5 to 7 μm. The semiconductor photodetector has the semiconductor photodetector coating for either layer. Pressure of oxygen in atmosphere at the time of vacuum deposition of the TiO<SB>2</SB>layer is 2.6×10<SP>-2</SP>to 3.2×10<SP>-2</SP>Pa in either layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
