| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element and its manufacturing method. SOLUTION: In the nonvolatile memory element having a switching element, and a storage node connected with the switching element, the storage node 100 includes a lower metal layer 60 of an Al layer connected with an impurity region 42 of the switching element, a first insulating layer 62 of alumina, an intermediate metal layer 64 of an Al layer, a second insulating layer 66 of alumina, an upper metal layer 68 of an Au layer, a carbon nanolayer 70 of a fullerene layer, and a passivation layer 80 of SiO2, wherein the layers are formed in order on the lower metal layer 60. COPYRIGHT: (C)2008,JPO&INPIT |
