The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.
申请公布号
US2008142882(A1)
申请公布日期
2008.06.19
申请号
US20080070078
申请日期
2008.02.15
申请人
TANG SANH D;HALLER GORDON;BROWN KRIS K;ALLEN TUMAN EARL
发明人
TANG SANH D.;HALLER GORDON;BROWN KRIS K.;ALLEN TUMAN EARL