| 摘要 |
A conductive nitride representing magnetic property in room temperature and a method for manufacturing the same are provided to improve the efficiency of a spin implantation by growing TiN to which a transition metal is added through ion implantation, sputtering, or MBE(Molecular Beam Epitaxy). A transition metal, such as Cr, Mn, Fe, Co, Ni, and Cu, is doped by 1 - 10 at% into a conductive nitride such as TiN, TaN, NbN, and ZrN. In case a voltage is applied, a current is linearly changed at a junction of TiN/GaN. This represents that a general ohmic contact is formed at an interface of a metal and a semiconductor instead of a Schottky barrier when an interface is formed between the conductive nitride and the semiconductor. Therefore, an electron moves smoothly through the TiN so that the loss of data, for example, the change of a spin state of the electron. The conductive nitride to which the transition metal is added increases the efficiency of a spin implantation.
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