| 摘要 |
A semiconductor device including: a semiconductor layer including an element formation region including an element; a dielectric layer above the semiconductor; an electrode pad above the dielectric; a passivation layer above the pad and having an opening exposing part of the pad; and a bump in the opening and covering part of the element, the bump including first, second, third and fourth edges, the semiconductor having a forbidden region including: a first distance outward from a first line below the first edge, a second distance inward from the first line, a third distance outward from a second line below the second edge, a fourth distance inward from the second line, a fifth distance outward from a third line below the third edge, a sixth distance inward from the third line, a seventh distance outward from a fourth line below the fourth edge, and an eighth distance inward from the fourth line.
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