发明名称 |
Nonvolatile semiconductor memory |
摘要 |
A nonvolatile semiconductor memory having an LDD structure includes a control gate located above a channel region, insulating layers formed on the both side surface of the control gate, and I-letter shaped charge-storage layers formed on the insulating layers wherein a bottom surface of the each charge-storage layer are located above the LDD.
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申请公布号 |
US2008142877(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20070987169 |
申请日期 |
2007.11.28 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
HAYASHI TAKAHISA;YUDA TAKASHI |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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