发明名称 |
SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSISTOR (PiFET) AND METHOD OF FABRICATING THE SAME |
摘要 |
Embodiments of the invention include a partially insulated field effect transistor and a method of fabricating the same. According to some embodiments, a semiconductor substrate is formed by sequentially stacking a bottom semiconductor layer, a sacrificial layer, and a top semiconductor layer. The sacrificial layer may be removed to form a buried gap region between the bottom semiconductor layer and the top semiconductor layer. Then, a transistor may be formed on the semiconductor substrate. The sacrificial layer may be a crystalline semiconductor formed by an epitaxial growth technology.
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申请公布号 |
US2008145989(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20080040636 |
申请日期 |
2008.02.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;CHOE JEONG-DONG;KIM MIN-SANG;KIM SUNG-MIN |
分类号 |
H01L21/336;H01L29/06;C30B23/00;H01L21/331;H01L21/762;H01L21/8234;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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