| 摘要 |
<p>A method for manufacturing a transistor for a flat panel display device is provided to simplify the manufacturing process by forming an ion-injected active region by using a deposition process without a separate doping process. A transistor includes a substrate, a first active layer(114), a second active layer(116), a metal silicide layer(120), a gate electrode(106), a source electrode(108), and a drain electrode(110). The first active layer is formed on the substrate and includes source/drain regions. The second active layer is formed on the first active layer and includes a channel region between the source/drain regions. The metal silicide layer is formed on the source/drain regions. The gate electrode is formed on a region corresponding to a channel region of the second active layer. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region.</p> |
