发明名称 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要 A semiconductor device (1) has a plurality of photodiodes (20) on a semiconductor substrate (11). The photodiodes (20(20a, 20b)) have cathodes (22) and a common anode (21), which are formed electrically independent of the semiconductor substrate (11). In the photodiodes having the common anode (21) and the separated cathodes (22), the output from the common anode (21) is treated as equivalent to the sum of the outputs of the separated photodiodes (20). Alternatively, a plurality of photodiodes have a common cathode and a plurality of separated anodes, and the output from the common cathode is treated as equivalent to the sum of the outputs of the separated photodiodes. The anode and cathode of a photodiode are completely isolated electrically from the substrate, whereby noise and crosstalk can be reduced.
申请公布号 KR20080053464(A) 申请公布日期 2008.06.13
申请号 KR20087005372 申请日期 2006.08.10
申请人 SONY CORPORATION 发明人 ARAI CHIHIRO
分类号 H01L27/14;H01L31/10 主分类号 H01L27/14
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