PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

摘要

A photomask blank capable of restricting charge-up by electron beam drawing used for forming a resist pattern, a satisfactory photomask blank for optimizing a dry etching speed in the depth direction of a shielding film, a photomask blank capable of shortening a dry etching time by increasing the dry etching speed of a shielding film. The photomask blank having on a translucent substrate a shielding film consisting of materials mainly containing chromium, wherein the shielding film consists of materials containing hydrogen. The shielding film is formed so that the film forming speed of a layer formed on the translucent substrate side is higher than that of a layer formed on the surface side of the shielding film. The dry etching speed on the translucent substrate side of the shielding film is set to be lower than that on the surface side of the shielding film.