| 摘要 |
A method for forming a trench in a semiconductor device is provided to form a trench with a high aspect ratio by using a nickel hard mask pattern during a plasma etching process. A nickel hard mask pattern for a trench is formed on a semiconductor substrate(10). A plasma etching process using SF6 and O2 gases is performed by using the nickel hard mask pattern as an etching barrier, such that the semiconductor substrate is etched and a trench(t) is formed. An etching stopper film is formed at a side surface of the trench. The plasma etching process is performed by using an ICP(Inductively Coupled Plasma) etching tool.
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