发明名称 STORAGE ELEMENT WITH CLEAR OPERATION AND METHOD THEREOF
摘要 A storage device (18) a method in the storage element (18), where the storage element has a first data storage node (70) and a second data storage node (60) and where the first data storage node is coupled to a bit line via a first pass transistor (50) and where the second data storage node is coupled to a complementary bit line via a second pass transistor (40), is provided. The method includes performing a clear operation on the first data storage node (70) and the second data storage node (60) by providing a clear signal to a first clear transistor (90) coupled to the first data storage node (70) and a second clear transistor (80) coupled to the second data storage node (60).
申请公布号 KR20080053463(A) 申请公布日期 2008.06.13
申请号 KR20087005173 申请日期 2008.02.29
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 RAMARAJU RAVINDRARAJ;KENKARE PRASHANT U.
分类号 G11C11/41;G11C15/00 主分类号 G11C11/41
代理机构 代理人
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