| 摘要 |
An internal voltage generator of a semiconductor memory device and a method thereof are provided to control operation period of the internal voltage generator in a test mode by adding test mode operation in the internal voltage generator of the semiconductor memory device. A voltage detection unit(300) detects the level of a boosting voltage, and outputs a detection signal with an enable period determined in response to the detection result. An enable period changing unit(340) outputs a test detection signal by changing the enable period of the detection signal received in response to an enable period test signal. A multiplexing unit(350) outputs one of the detection signal and the test detection signal in response to a test mode signal. An oscillation unit(310) outputs an oscillation signal toggling with an expected cycle in the enable period of a signal outputted from the multiplexing unit. A pumping unit(320) outputs the boosting voltage by performing charge pumping operation in response to the oscillation signal.
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