| 摘要 |
A method for etching a semiconductor device using a hard mask layer is provided to improve a line width uniformity of the semiconductor device by decreasing a loss in a hard mask during an etching process. A nitride film-group first hard mask layer(102) is formed on a layer to be etched(101). A carbon-group second hard mask layer pattern is formed on the first hard mask layer. The first hard mask layer is etched by using the second hard mask layer pattern as an etching barrier, such that a first hard mask layer pattern is formed. A cleaning process is performed to remove an etching polymer, which is formed while forming the first hard mask layer pattern. The layer is etched by using the second hard mask layer pattern as the etching barrier.
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