发明名称 METHOD OF FABRICATING NI-AL THIN FILM MULTILAYERS OF OPTIMIZED DEPOSITION CONDITION BY MOLECULAR DYNAMICS SIMULATION
摘要 A method of manufacturing a Ni-Al multilayered thin film with improved regularity and uniformity by controlling optimized deposition conditions within a short time is provided. A method of manufacturing a Ni-Al multilayered thin film comprises performing molecular dynamics simulation of a Ni deposition atom as well as an Al deposition atom such that the multilayered thin film is manufactured under optimized deposition conditions in which surface roughness of the Ni deposition atom is converged to a range of 0 to 10 W^2, and surface roughness of the Al deposition atom is converged to a range of 0 to 5 W^2 by using an incidence angle, incidence energy, and deposition temperature of each of the deposition atoms. The method comprises performing a deposition process by optimizing the incidence angle, the incidence energy, and the deposition temperature of the Ni deposition atom to respective ranges of 0 to 30 degrees, 3 to 6 eV, and 300 to 500 deg.K. The method comprises performing the deposition process by optimizing the incidence angle, the incidence energy, and the deposition temperature of the Al deposition atom to respective ranges of 0 to 50 degrees, 3 to 6 eV, and 300 to 500 deg.K.
申请公布号 KR100838186(B1) 申请公布日期 2008.06.13
申请号 KR20070006729 申请日期 2007.01.22
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 CHUNG, YONG CHAE;LEE, SOON GUN
分类号 C23C14/00 主分类号 C23C14/00
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