发明名称 Manufacturing Method of Back Contacts for CIGS Solar Cell
摘要 <p>A method for manufacturing a back contact of a CI(G)S(Copper-Indium-Gallium-Selenide) solar cell is provided to enhance a sodium diffusion effect by changing pressure of reaction gas in a sputtering process. A solar cell includes a back contact having a CI(G)S light-absorbing layer. A method for manufacturing the back contact of the solar cell having the CI(G)S light-absorbing layer includes a process for forming a first conductive layer on a substrate by performing a DC sputtering process under a relatively high-pressure reaction gas, and a process for forming a second conductive layer on the first conductive layer by applying an RF bias to the substrate and performing the DC sputtering process under a relatively low-pressure reaction gas.</p>
申请公布号 KR100838167(B1) 申请公布日期 2008.06.13
申请号 KR20070032030 申请日期 2007.03.31
申请人 发明人
分类号 H01L31/04;H01L31/0224;H01L31/18 主分类号 H01L31/04
代理机构 代理人
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