| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask and a method for manufacturing a photomask effectively avoiding a problem of side lobe even in a region where the thickness of a translucent film is not optimized. <P>SOLUTION: In a phase shift mask having the translucent film 12 formed on a transparent glass substrate 10, when the thickness of the translucent film 12 is optimized to the pattern pitch in a fine pattern region 14, subpeaks generated by adjoining aperture may overlap in an isolated pattern region 16. When the subpeaks overlap, transmitted light is suppressed by using an overlapping state of subpeaks, such as shifting the position of one or both of the overlapping subpeaks (method A), decreasing the intensity of the subpeak (method B), or eliminating generation of the subpeak (method C). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
