FIELD-EFFECT TRANSISTOR UTILIZING NANOTUBE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a transistor of high integration degree in which a conductive nanotube is utilized as a gate and which is easily manufactured, and to provide its manufacturing method. SOLUTION: In this transistor, the nanotube is utilized as a gate. In the manufacturing method therefor, the nanotube is utilized as a mask when channel patterning. Thereby the transistor having a linewidth of 50 nm or less is acquired. COPYRIGHT: (C)2008,JPO&INPIT