| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining stable output even if source-drain current varies in a saturation operation region of a thin-film transistor due to kink effect. SOLUTION: The thin transistor 10 has a multi-gate structure in which a first thin-film transistor section 10a including a polycrystalline silicon film 1a as an active layer, and having a high-density N-type region 1c, a low-density N-type region 1d, a first channel region 1e and a high-density N-type region 1g; a second thin-film transistor section 10b having a high-density N-type region 1g, a second channel region 1i, a low-density N-type region 1j and a high-density N-type region 1k are connected in series. The channel length of the first thin-film transistor section 10a of the drain side is 0.5μm-1.5μm. COPYRIGHT: (C)2008,JPO&INPIT
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