| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanter capable of suppressing deformation in a filament. SOLUTION: The ion implanter includes: a plasma vessel 3 to which gas for generating plasma is introduced inside to generate plasma inside; a filament 9 that is positioned inside the plasma vessel and radiates thermal electrons by the application of voltage between one edge 9a and the other 9b; and an extraction electrode 17 for extracting ions from plasma by applying an electric field to plasma generated by the collision of thermal electrons radiated from the filament to the molecule of gas. The ions are injected to a desired target 1. The ion implanter further has support members 23a, 23b, 23c for supporting the filament in the halfway point where the filament is extended from one edge to the other. COPYRIGHT: (C)2008,JPO&INPIT
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