发明名称 METHOD OF FABRICATING A MICROELECTRONIC DEVICE INCLUDLING EMBEDDED THIN FILM CAPACITOR BY OVER-ETCHING THIN FILM CAPACITOR BOTTOM ELECTRODE AND MICROELECTRONIC DEVICE MADE ACCORDING TO THE METHOD
摘要 A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer build-up layer overlying the underlying conductive layer; providing a passive microelectronic structure; embedding the passive structure in the polymer build-up layer of the substrate; and patterning the passive structure after embedding, patterning including over-etching the bottom electrode layer. The passive microelectronic structure being embedded includes an unpatterned bottom electrode layer; an unpatterned capacitor dielectric layer overlying the bottom electrode layer; and an unpatterned top electrode layer overlying the capacitor dielectric layer.
申请公布号 US2008137263(A1) 申请公布日期 2008.06.12
申请号 US20060609295 申请日期 2006.12.11
申请人 发明人 MIN YONGKI;SEH HUANKIAT
分类号 H01G4/06;H01L21/62 主分类号 H01G4/06
代理机构 代理人
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