SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

An insulated gate semiconductor device, specifically, a trench lateral MOSFET having improved hot carrier resistance can be provided without increasing the number of processes and device pitch and without degrading device breakdown voltages and on-resistance characteristics RonA. A junction depth Xj of a p base region of a TLPM (trench lateral power MOSFET) is made smaller than the depth of a trench, and the trench is formed with a depth Dt of about 1.2 mum such that the junction does not contact a curved corner part at the bottom of the trench.