| 摘要 |
A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
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