INSULATING-GATE FET AND ITS MANUFACTURING METHOD

摘要

Provided is an IGFET capable of turning off when voltage of an inverse direction is applied. The IGFET includes an N⁺ first drain region (6), an N^- second drain region (7), a P first body region (8), a P^- second body region (9), an N first source region (10a), and an N⁺ second source region (10b). A gate insulating film (5) and a gate electrode (4) are arranged in a trench (11) formed on a semiconductor substrate (1). The source electrode (3) is in ohmic contact with the N first source region (10a) and the N⁺ second source region (10b) and in shot key barrier contact with the P^- second body region (9).