| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which can raise performance and integration degree of an integrated circuit and can attain consolidation of a switching element and the integrated circuit without spoiling heat radiation. <P>SOLUTION: The power semiconductor device includes a conductive plate 3, the switching element 1 which is mounted on the conductive plate 3 and is electrically connected, and the integrated circuit 4 which is mounted on the conductive plate 3 apart from the switching element 1 and is electrically connected. The switching element 1 turns connection between first, second main electrodes on/off in response to a control signal input to a control electrode. The integrated circuit 4 has a control circuit 72 to control the ON/OFF of the switching element 1 and a back voltage detecting element 31 to detect the back voltage of the integrated circuit 4. <P>COPYRIGHT: (C)2008,JPO&INPIT |
