| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodiode excellent in spectral sensitivity characteristics. <P>SOLUTION: The photodiode 10 is provided with a semiconductor substrate 11, such as an Si substrate, having a light-receiving surface 26 for receiving a light L and having unevenness formed with a plurality of convex portions 24 and containing a pn-junction 28. The substrate 11 is provided with a first conductivity-type (e.g., n-type) semiconductor substrate 12, and a second conductivity-type (e.g., p-type) semiconductor layer 14 formed on the semiconductor substrate 12. A distance B from the light-receiving surface 26 to the pn-junction 28 is smaller than a level difference A of the unevenness. <P>COPYRIGHT: (C)2008,JPO&INPIT |
